Quantifying the limits of HANPP and carbon emissions which prolong total species well-being

Anthropogenic climate and land-use change are leading to irreversible losses of global biodiversity, upon which ecosystem functioning depends. Since total species' well-being depends on ecosystem goods and services, man must determine how much net primary productivity (NPP) may be appropriated and carbon emitted so as to not adversely impact this and future generations. In 2005, man ought to have only appropriated 9.72 Pg C of NPP, representing a factor 2.50, or 59.93%, reduction in human-appropriated NPP in that year. Concurrently, the carbon cycle would have been balanced with a factor 1.26, or 20.84%, reduction from 7.60 Gt C/year to 5.70 Gt C/year, representing a return to the 1986 levels. This limit is in keeping with the category III stabilization scenario of the Intergovernmental Panel for Climate Change. Projecting population growth to 2030 and its associated basic food requirements, the maximum HANPP remains at 9.74 ± 0.02 Pg C/year. This time-invariant HANPP may only provide for the current global population of 6.51 billion equitably at the current average consumption of 1.49 t C per capita, calling into question the sustainability of developing countries striving for high-consuming country levels of 5.85 t C per capita and its impacts on equitable resource distribution. © Springer Science+Business Media B.V. 2009.

Room temperature single-photon detectors for high bit rate quantum key distribution

We report room temperature operation of telecom wavelength single-photon detectors for high bit rate quantum key distribution (QKD). Room temperature operation is achieved using InGaAs avalanche photodiodes integrated with electronics based on the self-differencing technique that increases avalanche discrimination sensitivity. Despite using room temperature detectors, we demonstrate QKD with record secure bit rates over a range of fiber lengths (e.g., 1.26 Mbit/s over 50 km). Furthermore, our results indicate that operating the detectors at room temperature increases the secure bit rate for short distances. © 2014 AIP Publishing LLC.

Atom probe tomography for advanced metallization

In microelectronics, the increase in complexity and the reduction of devices dimensions make essential the development of new characterization tools and methodologies. Indeed advanced characterization methods with very high spatial resolution are needed to analyze the redistribution at the nanoscale in devices and interconnections. The atom probe tomography has become an essential analysis to study materials at the nanometer scale. This instrument is the only analytical microscope capable to produce 3D maps of the distribution of the chemical species with an atomic resolution inside a material. This technique has benefit from several instrumental improvements during last years. In particular, the use of laser for the analysis of semiconductors and insulating materials offers new perspectives for characterization. The capability of APT to map out elements at the atomic scale with high sensitivity in devices meets the characterization requirements of semiconductor devices such as the determination of elemental distributions for each device region. In this paper, several examples will show how APT can be used to characterize and understand materials and process for advanced metallization. The possibilities and performances of APT (chemical analysis of all the elements, atomic resolution, planes determination, crystallographic information...) will be described as well as some of its limitations (sample preparation, complex evaporation, detection limit, ...). The examples illustrate different aspect of metallization: dopant profiling and clustering, metallic impurities segregation on dislocation, silicide formation and alloying, high K/metal gate optimization, SiGe quantum dots, as well as analysis of transistors and nanowires. © 2013 Elsevier B.V. All rights reserved.